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Common features of oxygen and selenium atoms' redistribution in silicon during the high dose implantation and subsequent annealing are discussed. In both cases, the formation of two maximums on the resulting impurity profiles is observed. The first maximum is situated at the depth, coincided well with the mean projected range. The second maximum is situated deeper behind the first one. In case of...
The technique of accelerator mass spectrometry (AMS) has spread worldwide since its first demonstration 25 years ago. The equipment used today is very diverse and dedicated accelerators as well as old ''nuclear physics machines'' can be found in the nearly 50AMS laboratories today. The most widely spread application of AMS is for radiocarbon dating. However, AMS with 14 C as well as with...
A novel technique of manufacturing high electric performance p-n junctions has been investigated in this paper. In the first step, amorphous silicon films (a-Si) with gradually changed thickness of 20, 36, 81.5 and 106nm have been deposited on low and high resistivity Si wafers by the LPCVD method. In the second step, the low energetic boron ions ( 11 B + ,10keV, 5x10 1 ...
Within the linear response theory the electronic energy loss in the degenerate electron gas for the slow excited H- to Be-like ions was calculated. The results were compared with the characteristics for the ions in the ground state and with the experimental data. The ion was described by the Hartree-Fock-Slater formalism and the medium by the Lindhard dielectric function. The ion-electron screening,...
The paper presents the results of experiments on depositing of the multicomponent Ti-B-N, Ti-Si-N, and Ti-B-Si-N coatings on HSS steel using the ARC PVD technique in a novel two-step approach with the plasma pulse pretreatment. The coatings were characterized by X-ray diffraction and tribological tests (nanohardness measurements, scratch tests, wear resistance). The Ti-B-N coatings showed the highest...
Low energy (from 0 up to 13eV) electron attachment to formic and acetic acid is studied for the first time by means of mass spectrometric detection of the product anions. The energy spread of electron beam was 120meV (acetic acid) and 140meV in the case of formic acid. For all negative fragments estimates for the absolute partial cross sections were obtained. In the case of both acids, the (parent-H)...
A new system for ion beam assisted deposition (IBAD) of metal layers on solid surfaces is described. A new original procedure for IBAD modification of metal surface covers a few physical processes such as in situ ion implantation, metal layer deposition and ion beam mixing. A truncated cone serves as a sputter target. A beam of ions enters the cone along its axis, impinges onto the target surface...
Damage production was studied in 710MeV Bi and 1.3GeV U ions irradiated single-crystalline germanium by means of transmission electron microscopy and selective chemical etching. The formation of discontinuous tracks was registered in the depth region of high electronic energy loss of the incident ions. The observed features of discontinuous track formation in Ge are described within the fluctuation...
Fretting wear behaviour of Ti-6Al-4V specimens after different diffusion processes is being analysed in the work. During the treatments (3 or 6h annealing at the temperature 1023K) the surface of the specimens has been exposed to a glow discharge plasma in the atmosphere composed of Ar and O 2 with two different oxygen concentrations. In result the near-surface regions of all the specimens...
Moulds for light-alloy die casting are usually made of TiN-coated AISI H13 tool steel. During operation, such moulds undergo wear caused by mechanical action of light alloy injected under a high pressure, corrosive attack of the alloy, thermal cycling, and high-temperature corrosion (oxidation). Recently, it has been shown that Ti-Si-B-N coatings prepared by reactive sputtering from the multi-element...
The similarity between long-range change of the microhardness of the permalloy-79 NM foils at the low-dose ion and light (photon) irradiation is investigated. It is shown that for both cases, the relative changes of microhardness (ΔH/H) at the opposite side (to irradiated one) of the foils are determined by total energy (D) incident on the surface. The two maxima on the ΔH/H versus D curves exist...
The authors present results of the investigations on the growth of nitrided layer formed during gas nitriding after the surface activation. Cathode sputtering was used as an activation treatment which increases the number of activated centres. The surface of the samples was bombarded by nitrogen or argon ions.The experiments were carried out on the samples made of α-Fe. The parameters of the sputtering...
The MOCVD-grown epitaxial layers of Al x Ga 1-x As with x=0.43 were implanted at room temperature with 1.5MeV As ions to different doses in the range from 5x10 13 to 5x10 15 cm -2 . The samples were studied with a number of X-ray diffraction methods using synchrotron radiation, in particular, recording of rocking curves with a very small...
The aim of this study was to check experimentally the feasibility of processing ultrathin Si 3 N 4 layers by low-temperature deposition of quality allowing in the future their application as the gate dielectric. The layers were grown in PECVD planar electrodes, RF plasma system. The optimisation of the technology was performed in order to obtain good reproducibility and control of...
The results of an investigation of ion/molecule reactions in the gaseous mixtures of carbon dioxide-methane are presented. Relative values of the ion currents for the observed secondary ions HCO 2+ , HCO + , CH 5+ were determined as a function of gas pressure in the ion source collision chamber, and concentration of carbon dioxide in the mixture. The concentration...
The present article deals with the retention of fission products in nuclear ceramics considered as possible inert matrices for actinide transmutation. Various concentrations of a typical fission product (Cs) were introduced into yttria-stabilized zirconia and magnesium-aluminate spinel by ion implantation. The modifications of the Cs implantation profiles resulting from thermal treatments (annealing...
Gallium nitride is a novel material for short wavelength (blue) optoelectronics. Our previous investigation showed that Mn doped GaN has paramagnetic or antiferromagnetic properties opening new possible applications. The high concentration of magnetic ions possibly allows for the use of such a material in magnetooptic and spintronic devices. GaMnN and GaMnMgN powders were prepared by heating mixtures...
The basis of a new technology allowing the bonding of GaAs layers on various substrates is described. The method consists in the use of a two-step thermal profile during hydrogen implantation. In consequence, the transfer of GaAs layer on oxidized silicon substrate can be performed at temperatures as low as 200 o C. The method opens the possibility of fabrication of high-frequency or light-emitting...
Resistive sintered CrSi 2 /Si has been used as a model material for field electron emission experiments. The measured characteristics of emission current show some discrepancy from the standard plot calculated from the Fowler-Nordheim theory with experimentally determined coefficients. There are indications that electric field penetration into the emitter enhances electron emission. It is...
The results of the change of the charge-carrier lifetime have been analyzed, and kinetics of accumulation and annealing of defects in p + -n structures fabricated in high-resistance neutron transmutation-doped (NTD) silicon, irradiated by electrons with the energy of 6MeV and annealed at temperatures 20-600 o C has been investigated. Data on the structures fabricated in phosphorus-doped...
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